Karol Frohlich

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EMPLOYMENT:

2017-present Senior research scientist, Centre for Advanced Materials Application, SAS

2012-2016 Vice-president of Slovak Academy of Sciences

2002-2012 Director of the Institute of Electrical Engineering, Slovak Academy of Sciences

1998-2002 Research scientist, Institute of Electrical Engineering, Slovak Academy of Sciences

1978-1998 Researcher, Institute of Electrical Engineering, Slovak Academy of Sciences

EDUCATION:

DrSc., Research professor, Slovak High Technical School in Brastislava

PhD., 1998, Faculty of Electrical Engineering, Slovak High Technical School　

Ing, Electrical Engineering, 1977, Faculty of Electrical Engineering, Slovak High Technical School in Brastislava

AWARDS: Award Chevalier dans l’Ordre des Palmes Académiques, (French Ministry of Education and Research, 2009).

RESEARCH INTEREST: atomic layer deposition, chemical vapor deposition, microelectronics, energy storage, batteries

ORCID iD: 0000-0002-9282-8942

RELEVANT PUBLICATIONS:

• S. Pignard, H. Vincent, J. P. Sénateur, K. Fröhlich, and J. Šouc: Effect of crystallinity on the magnetoresistive properties of La_0.8MnO_3-d thin films grown by chemical vapor deposition, Appl. Phys. Lett. 73 (1998) 999.
• K. Frőhlich, K. Hušeková, D. Machajdik, J.C. Hooker, N. Perez, M. Fanciulli, S. Ferrari, C. Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom: Ru and RuO₂ gate electrodes for advanced CMOS technology, Mat. Sci. and Engn. B 109 (2004) 117.
• K. Fröhlich, M. Ťapajna, A. Rosová, E. Dobročka, K. Hušeková, J. Aarik, and A. Aidla, Growth of high-dielectric-constant TiO₂ films in capacitors with RuO₂ electrodes, Electrochem. Solid State Lett. 11 (2008) G19.
• K. Fröhlich: TiO₂-based structures for nanoscale memory applications, Mat. Sci. in Semicond. Processing 16 (2013) 1186.

• B. Hudec, I-T. Wang, W-L. Lai, C-C. Chang, P. Jančovič, K. Fröhlich, M. Mičušík, M. Omastová, T-H. Hou: Interface engineered HfO₂-based 3D vertical ReRAM, J. Phys. D: Appl. Phys. 49 (2016) 215102.
• M. Mikolášek, K. Fröhlich, K. Hušeková, J. Racko, V. Rehacek, F. Chymo, M. Tapajna and L. Harmatha: Silicon based MIS photoanode for water oxidation: A comparison of RuO₂ and Ni Schottky contacts, Appl. Surf. Sci. 461 (2018) 48.
• G. Niu, P. Calka, P. Huang, S. U. Sharath, S. Petzold, A. Gloskovskii, K. Fröhlich, Y. Zhao, J. Kang, M. A. Schubert, F. Bärwolf, W. Ren, Z-G. Ye, E. Perez, C. Wenger, L. Alff and T. Schroeder: Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy, Mater. Res. Lett 7 (2019) 117.
• I. Kundrata, M. K. S. Barr, S. Tymek, D. Döhler, B. Hudec, P. Brüner, G. Vanko, M. Precner, T. Yokosawa, E. Spiecker, M. Plakhotnyuk, K. Fröhlich, and J. Bachmann, Additive Manufacturing in Atomic Layer Processing Mode, Small Methods (2022), 6, 2101546.
• P. P. Sahoo, M. Mikolásek, K. Huseková, E. Dobrocka, J. Šoltys, P. Ondrejka, M. Kemény, L. Harmatha, M. Micusí̌k, and K. Fröhlich, Si-Based Metal−Insulator−Semiconductor Structures with RuO2−(IrO2) Films for Photoelectrochemical Water Oxidation, ACS Appl. Energy Mater. 2021, 4, 11162.
• P. P. Sahoo, A. Güneren, B. Hudec, M. Mikolásek, A. Nada, M. Precnerová, M. Micusí̌k, Z. Lencé̌s, P. Nádazdy, and K. Fröhlich, Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon−Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films, ACS Appl. Nano Mater. 2024, accepted.